THE FORMATION OF INTERFACES ON GAAS AND RELATED SEMICONDUCTORS - A REASSESSMENT

被引：59

作者：

LUDEKE, R

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(83)90536-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：143 / 168

页数：26

共 69 条

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[2] INTERFACE STATES AT GA-GAAS INTERFACE
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[7] BASSETT GA, 1959, STRUCTURE PROPERTIES, P11
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[9] MEASUREMENT AND MODULATION OF ATOMIC INTER-DIFFUSION AT AU-AL-GAAS(110) INTERFACES
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[10] CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATION
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[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 784 - 786