INTER-DIFFUSION AND NUCLEATION OF AL MONOLAYERS ON GAAS(001)-C(2X8) STUDIED BY AES

[1] ANDERSSON TG, 1981, SURF SCI, V110, pL583, DOI 10.1016/0039-6028(81)90576-8

[2] SURFACE X-RAY ABSORPTION-SPECTROSCOPY - SURFACE EXAFS AND SURFACE XANES [J]. APPLIED SURFACE SCIENCE, 1980, 6 (3-4) : 392 - 418

[3] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666

[4] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[5] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2682 - 2684

[6] AL-REACTIONS WITH GAAS (100) SURFACES [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 127 - 131

[7] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 667 - 673

[8] LUDEKE R, 1980, 8TH P INT VAC C CANN, P579

[9] PROPERTIES OF ALUMINUM EPITAXIAL-GROWTH ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7317 - 7320

[10] ELECTRON STIMULATED OXIDATION OF GAAS, STUDIED BY QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1975, 47 (02) : 525 - 542

[1] ANDERSSON TG, 1981, SURF SCI, V110, pL583, DOI 10.1016/0039-6028(81)90576-8

[2] SURFACE X-RAY ABSORPTION-SPECTROSCOPY - SURFACE EXAFS AND SURFACE XANES [J]. APPLIED SURFACE SCIENCE, 1980, 6 (3-4) : 392 - 418

[3] ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 661 - 666

[4] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) : 3328 - 3332

[5] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2682 - 2684

[6] AL-REACTIONS WITH GAAS (100) SURFACES [J]. SOLID STATE COMMUNICATIONS, 1981, 37 (02) : 127 - 131

[7] INTERFACE BEHAVIOR AND CRYSTALLOGRAPHIC RELATIONSHIPS OF ALUMINUM ON GAAS(100) SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 667 - 673

[8] LUDEKE R, 1980, 8TH P INT VAC C CANN, P579

[9] PROPERTIES OF ALUMINUM EPITAXIAL-GROWTH ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7317 - 7320

[10] ELECTRON STIMULATED OXIDATION OF GAAS, STUDIED BY QUANTITATIVE AUGER-ELECTRON SPECTROSCOPY [J]. SURFACE SCIENCE, 1975, 47 (02) : 525 - 542