PROPERTIES OF ALUMINUM EPITAXIAL-GROWTH ON GAAS

被引：53

作者：

PETROFF, PM

FELDMAN, LC

CHO, AY

WILLIAMS, RS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.328722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7317 / 7320

页数：4

共 13 条

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[3]

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[8] X-RAY TOTAL-EXTERNAL-REFLECTION-BRAGG DIFFRACTION - STRUCTURAL STUDY OF THE GAAS-AL INTERFACE [J].

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[9] NEW RESULTS IN THE STUDY OF THE ALUMINUM EPITAXIAL-GROWTH ON GALLIUM ARSENIDE(001) [J].

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[10] INTERACTION OF SILVER AND ALUMINUM ON GALLIUM-ARSENIDE (001) SURFACES - STUDY BY MBE AND ASSOCIATED TECHNIQUES [J].

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