A new method for the determination of strain profiles in epitaxic thin films using X-ray diffraction

被引:28
作者
Boulle, A
Masson, O
Guinebretière, R
Dauger, A
机构
[1] ENSCI, CNRS, UMR 6638, F-87065 Limoges, France
[2] Fac Sci, CNRS, UMR 6638, F-87060 Limoges, France
关键词
D O I
10.1107/S0021889803020351
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new and versatile method is proposed for the determination of strain profiles in epitaxic thin films. It is based on the simulation of the X- ray diffraction ( XRD) profiles using cubic B- spline functions to model the vertical lattice displacement profile. The lattice displacement profile, and consequently the strain profile, directly results from a least- square fit of the model to the experimental XRD profiles. No a priori assumption is made regarding the shape of the strain profile. Moreover, as spline functions are used, the recovered lattice displacement profile is smooth and exhibits a minimum curvature, thus avoiding oscillating or saw- toothed unphysical solutions. The potential of this method is illustrated with ( 100) yttria- stabilized zirconia epitaxic thin films deposited onto ( 11 (2) over bar0) sapphire substrates by sol - gel processing.
引用
收藏
页码:1424 / 1431
页数:8
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