Postgrowth thermal treatment of CuIn(Ga)Se2:: Characterization of doping levels in In-rich thin films

被引：39

作者：

Dirnstorfer, I

Hofmann, DM

Meister, D

Meyer, BK

机构：

[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany

[2] Siemens Solar GmbH, D-80807 Munich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 03期

关键词：

D O I：

10.1063/1.369273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical and electrical measurements were carried out on annealed CuIn(Ga)Se-2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 degrees C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS. The annealing step reduces the donor density and the high compensation. This effect allows the investigation of the defect levels of In-rich CIGS which is not possible in as-grown layers due to the dominating fluctuating potentials. The activation energies for the donors and acceptors in In-rich CIGS were found to be 10 and 75 meV, respectively. The densities are in the order of 10(18) cm(-3) each, with a compensation ratio of 0.99. (C) 1999 American Institute of Physics. [S0021-8979(99)08503-5].

引用

页码：1423 / 1428

页数：6

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