Preparation of crystalline CdSe particles by chemical bath deposition

被引:35
作者
Yamamoto, O
Sasamoto, T
Inagaki, M
机构
[1] Kanagawa Inst Technol, Dept Appl Chem, Atsugi, Kanagawa 24302, Japan
[2] Hokkaido Univ, Grad Sch Engn, Kita Ku, Sapporo, Hokkaido 060, Japan
关键词
D O I
10.1557/JMR.1998.0462
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Crystalline CdSe particles were prepared by keeping the precursor solutions at temperatures above 60 degrees C. It was essential to use sodium sulfite as a stabilizing agent for selenium ions and sodium dicarboxylate as a complexing agent for cadmium in the precursor solution. The principal crystalline phase of the samples obtained at 60 degrees C was a cubic zincblende-type phase, but those prepared at 80 degrees C coexisted with a hexagonal wurtzite-type phase. The ratio of cadmium to selenium in the samples decreased with an increase of the concentration of selenourea in the precursor solutions, irrespective of the kind of complex agents and the keeping time of the precursor solutions. The band-gap energy of CdSe with an atomic ratio (Cd/Se) of 1 showed a value of 1.74 eV, but that with the ratio of 2.3 gave a slightly smaller value of 1.42 eV.
引用
收藏
页码:3394 / 3398
页数:5
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