Highly photoluminescent ZnSe/ZnS quantum dots

被引：71

作者：

Nikesh, VV ^{[1
]}

Mahamuni, S ^{[1
]}

机构：

[1] Univ Pune, Dept Phys, Ctr Adv Studies Mat Sci & Solid State Phys, Pune 411007, Maharashtra, India

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2001年 / 16卷 / 08期

关键词：

D O I：

10.1088/0268-1242/16/8/309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnSe quantum dots have been synthesized using a simple aqueous route. Coating ZnSe quantum dots with a ZnS monolayer, yields a remarkable enhancement in the PL quantum efficiency at room temperature without affecting the spectral distribution. The results suggest that passivation of surface states, along with an increased localization of the hole in core ZnSe layer, gives rise to high luminescence quantum yield.

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页码：687 / 690

页数：4

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