Ge-interface engineering with ozone oxidation for low interface-state density

被引：171

作者：

Kuzum, Duygu ^{[1
]}

Krishnamohan, Tejas ^{[2
]}

Pethe, Abhijit J. ^{[3
]}

Okyay, Ali K. ^{[1
]}

Oshima, Yasuhiro ^{[4
]}

Sun, Yun ^{[4
]}

McVittie, James P. ^{[1
]}

Pianetta, Piero A. ^{[1
]}

McIntyre, Paul C. ^{[4
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Ctr Integrated Syst, Stanford, CA 94305 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] Intel Corp, Hillsboro, OR 97124 USA

[4] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 04期

关键词：

germanium; interface-state density extraction; oxide; surface passivation;

D O I：

10.1109/LED.2008.918272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone oxidation to engineer Ge/insulator interface. Density of interface states (D-it) across the bandgap and close to the conduction band edge was extracted using conductance technique at low temperatures. Dit dependence on growth conditions was studied. Minimum D-it of 3 x 10(11) cm(-2)V(-1) was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D-it are strongly affected by the distribution of oxidation states and the quality of the suboxide.

引用

页码：328 / 330

页数：3

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