Effects of longitudinal grain boundaries on the performance of MILC-TFT's

被引：76

作者：

Bhat, GA ^{[1
]}

Jin, ZH ^{[1
]}

Kwok, HS ^{[1
]}

Wong, M ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Clear Water Bay, Kowloon, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 02期

关键词：

lateral crystallization; MMGB; nickel; thin-film transistors;

D O I：

10.1109/55.740664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compared to conventional solid phase crystallized (SPC) thin-film transistors (TFT's), metal induced laterally crystallized (MILC) TFT's exhibit significantly enhanced performance at reduced processing temperature. It is concluded that the major improvements in MILC-TFT's result from the growth of the crystal grains in a direction longitudinal to that of the current flow, whereas in SPC-TFT's, the grain boundaries are randomly oriented. It is also observed in this work that while the MILC-TFT's are less sensitive to short-channel effects (SCE's), their leakage current exhibits higher sensitivity to channel length reduction. These differences again can he traced to the different arrangements of the grain boundaries in the two types of devices.

引用

页码：97 / 99

页数：3

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