CHARACTERISTICS OF POLYCRYSTALLINE-SI THIN-FILM TRANSISTORS FABRICATED BY EXCIMER-LASER ANNEALING METHOD

被引：38

作者：

KUBO, N ^{[1
]}

KUSUMOTO, N ^{[1
]}

INUSHIMA, T ^{[1
]}

YAMAZAKI, S ^{[1
]}

机构：

[1] GIANT ELECTR TECHNOL CORP,TOKYO 103,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 10期

关键词：

D O I：

10.1109/16.324604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of excimer laser annealed (ELA) polycrystalline-Si thin film transistors (poly-Si TFT's) were investigated. These results were compared to those of poly-Si TFT fabricated by solid phase crystallization (SPC). From the temperature dependence of the drain current, the activation energies of n-type poly-Si TFT's were obtained. The activation energies have negative values under the gate voltage from 0 to 5 V. The negative activation energy together with small threshold voltage (V(th)) are the main characteristics of ELA poly-Si TFT. Temperature dependencies of V(th) and field effect mobility are very similar to those of SPC. From these results, it is concluded that the trap state density of ELA poly-Si TFT is very small and the electrical characteristics can be explained by the band tail states localized at the grain boundary.

引用

页码：1876 / 1879

页数：4

共 16 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].