DEMONSTRATION OF THE POTENTIAL OF ACCUMULATION-MODE MOS-TRANSISTORS ON SOI SUBSTRATES FOR HIGH-TEMPERATURE OPERATION (150-300-DEGREES-C)

被引：35

作者：

FLANDRE, D

TERAO, A

FRANCIS, P

GENTINNE, B

COLINGE, JP

机构：

[1] Laboratoire de Microelectronique, Universite Catholique de Louvain, B-1348, Louvain-la-Neuve

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 01期

关键词：

D O I：

10.1109/55.215084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of accumulation-mode (AM) MOS SOI transistors in the 150-300-degrees-C temperature range are reported and discussed. The increases of the threshold voltage shift and off leakage current with temperature of these SOI p-MOSFET's are observed to be much smaller than their bulk equivalents. Simple models are presented to support the experimental data.

引用

页码：10 / 12

页数：3

共 7 条

[1]

CHAN TY, 1982, THESIS U ARIZONA TUC

[2] CONDUCTION MECHANISMS IN THIN-FILM ACCUMULATION-MODE SOI P-CHANNEL MOSFETS [J].