MEASUREMENT OF THRESHOLD VOLTAGES OF THIN-FILM ACCUMULATION-MODE PMOS SOI TRANSISTORS

被引：69

作者：

TERAO, A ^{[1
]}

FLANDRE, D ^{[1
]}

LORATAMAYO, E ^{[1
]}

VANDEWIELE, F ^{[1
]}

机构：

[1] UNIV AUTONOMA BARCELONA,CTR NACL MICROELECTR,E-08193 BARCELONA,SPAIN

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 12期

关键词：

D O I：

10.1109/55.116954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Accumulation-mode PMOS transistors on SOI are characterized by several conduction mechanisms. Measurements of the threshold voltage corresponding to each of them are presented for the first time, as well as an intuitive physical interpretation of their dependence on the front- and back-gate voltages.

引用

页码：682 / 684

页数：3

共 4 条

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COLINGE, JP .

ELECTRONICS LETTERS, 1988, 24 (05) :257-258

[2] CONDUCTION MECHANISMS IN THIN-FILM ACCUMULATION-MODE SOI P-CHANNEL MOSFETS [J].

COLINGE, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :718-723

[3] PROBLEMS IN DESIGNING THIN-FILM ACCUMULATION-MODE P-CHANNEL SOI MOSFETS FOR CMOS DIGITAL CIRCUIT ENVIRONMENT [J].

FLANDRE, D .

ELECTRONICS LETTERS, 1991, 27 (14) :1280-1282

[4]

SCHRODER DK, 1990, SEMICONDUCTOR MATERI

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