XECL EXCIMER LASER ANNEALING USED TO FABRICATE POLY-SI TFTS

[1] AUSTON DH, 1978, APPL PHYS LETT, V33, P538

[2] FUKUDA F, 1986, 1986 SID INT S SAN D, P293

[3] GAVLIN MO, 1982, PHYS REV LETT, V48, P33

[4] HOTTA S, 1986, 186 SID INT S SAN DI, P298

[5] STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5169 - 5175

[6] LEBOSQ V, 1985, 1985 P INT DISPL RES, P34

[7] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1193 - 1202

[8] INSITU OBSERVATION OF PULSED LASER DOPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10): : L1935 - L1937

[9] FABRICATION OF HEAVILY-DOPED POLYCRYSTALLINE SILICON FILM USING A LASER-DOPING TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1678 - L1680

[10] SAMESHIMA T, 1986, 1986 P MRS MAT ISS S, P435

[1] AUSTON DH, 1978, APPL PHYS LETT, V33, P538

[2] FUKUDA F, 1986, 1986 SID INT S SAN D, P293

[3] GAVLIN MO, 1982, PHYS REV LETT, V48, P33

[4] HOTTA S, 1986, 186 SID INT S SAN DI, P298

[5] STOCHASTIC-MODEL FOR GRAIN-SIZE VERSUS DOSE IN IMPLANTED AND ANNEALED POLYCRYSTALLINE SILICON FILMS ON SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5169 - 5175

[6] LEBOSQ V, 1985, 1985 P INT DISPL RES, P34

[7] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1193 - 1202

[8] INSITU OBSERVATION OF PULSED LASER DOPING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (10): : L1935 - L1937

[9] FABRICATION OF HEAVILY-DOPED POLYCRYSTALLINE SILICON FILM USING A LASER-DOPING TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1678 - L1680

[10] SAMESHIMA T, 1986, 1986 P MRS MAT ISS S, P435