INSITU OBSERVATION OF PULSED LASER DOPING

被引：8

作者：

SAMESHIMA, T

TOMITA, H

USUI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 10期

关键词：

D O I：

10.1143/JJAP.27.L1935

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1935 / L1937

页数：3

共 8 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

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SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2] FABRICATION OF SUBMICROMETER MOSFETS USING GAS IMMERSION LASER DOPING (GILD) [J].

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BEZJIAN, K ;

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MAGEE, TJ .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :440-442

[3] SELF-ALIGNED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY LASER IMPLANTATION [J].

COXON, P ;

LLOYD, M ;

MIGLIORATO, P .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1785-1786

[4] EFFICIENT SI SOLAR-CELLS BY LASER PHOTOCHEMICAL DOPING [J].

DEUTSCH, TF ;

FAN, JCC ;

TURNER, GW ;

CHAPMAN, RL ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :144-146

[5] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

GALVIN, GJ ;

THOMPSON, MO ;

MAYER, JW ;

HAMMOND, RB ;

PAULTER, N ;

PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1982, 48 (01) :33-36

[6]

GLAZOV VM, 1969, LIQUID SEMICONDUCTOR, P60

[7] LASER-INDUCED MELTING OF PREDEPOSITED IMPURITY DOPING TECHNIQUE USED TO FABRICATE SHALLOW JUNCTIONS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :711-713

[8]

SAMESHIMA T, 1987, 1986 P MRS LAS PART, P491

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