SELF-ALIGNED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS BY LASER IMPLANTATION

被引：4

作者：

COXON, P

LLOYD, M

MIGLIORATO, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 26期

关键词：

D O I：

10.1063/1.96786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1785 / 1786

页数：2

共 10 条

[1]

DEPP SW, 1982, GRAIN BOUNDARIES SEM, P197

[2]

IBBS KG, 1984, OPT LASER TECHNOL, V16, P1

[3]

IBBS KG, 1983, OPT LASER TECHNOL, V15, P15

[4] A LIQUID-CRYSTAL DISPLAY PANEL USING AN MOS ARRAY WITH GATE-BUS DRIVERS [J].

KASAHARA, K ;

YANAGISAWA, T ;

SAKAI, K ;

ADACHI, T ;

INOUE, K ;

TSUTSUMI, T ;

HORI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (06) :744-748

[5] ELECTRICAL-PROPERTIES OF LIGHTLY DOPED POLYCRYSTALLINE SILICON [J].

LEE, JYM ;

CHENG, IC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :490-495

[6] CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON [J].

MALHI, SDS ;

SHICHIJO, H ;

BANERJEE, SK ;

SUNDARESAN, R ;

ELAHY, M ;

POLLACK, GP ;

RICHARDSON, WF ;

SHAH, AH ;

HITE, LR ;

WOMACK, RH ;

CHATTERJEE, PK ;

LAM, HW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :258-281

[7]

Morozumi S, 1984, SID 84 DIG, P316

[8]

OARA Y, 1983, JPN J APPL PHYS S221, V22, P493

[9] CHARACTERIZATION OF POLYCRYSTALLINE SILICON MOS-TRANSISTORS AND ITS FILM PROPERTIES .1. [J].

ONGA, S ;

MIZUTANI, Y ;

TANIGUCHI, K ;

KASHIWAGI, M ;

SHIBATA, K ;

KOHYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1982, 21 (10) :1472-1478

[10]

Shichijo H., 1983, International Electron Devices Meeting 1983. Technical Digest, P202

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