ELECTRICAL-PROPERTIES OF LIGHTLY DOPED POLYCRYSTALLINE SILICON

被引：14

作者：

LEE, JYM ^{[1
]}

CHENG, IC ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,CARLSBAD RES CTR,CARLSBAD,CA 92008

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 01期

关键词：

D O I：

10.1063/1.329952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：490 / 495

页数：6

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共 30 条

[1] ELECTRICAL-CONDUCTION IN IMPLANTED POLYCRYSTALLINE SILICON
ANDREWS, JM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 227 - 247
[2] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS
BACCARANI, G
RICCO, B
SPADINI, G
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5565 - 5570
[3] CHEMICAL VAPOR DEPOSITED POLYCRYSTALLINE SILICON.
Cowher, M.E.
Sedgwick, T.O.
[J]. 1600, (119):
[4] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &
[5] QUANTUM-MECHANICAL REFLECTION OF ELECTRONS AT METAL-SEMICONDUCTOR BARRIERS - ELECTRON TRANSPORT IN SEMICONDUCTOR-METAL-SEMICONDUCTOR STRUCTURES
CROWELL, CR
SZE, SM
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) : 2683 - &
[6] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS
CROWELL, CR
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &
[7] POLY I2L - HIGH-SPEED LINEAR-COMPATIBLE STRUCTURE
DAVIES, RD
MEINDL, JD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (04) : 367 - 375
[8] DEPENDENCE OF RESISTIVITY ON DOPING LEVEL OF POLYCRYSTALLINE SILICON
FRIPP, AL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1240 - 1244
[9] GERZBERG L, 1979, IEDM221 PAP
[10] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
KAMINS, TI
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4357 - &