LASER-INDUCED MELTING OF PREDEPOSITED IMPURITY DOPING TECHNIQUE USED TO FABRICATE SHALLOW JUNCTIONS

被引：57

作者：

SAMESHIMA, T ^{[1
]}

USUI, S ^{[1
]}

SEKIYA, M ^{[1
]}

机构：

[1] SONY CORP,DIV ADV ENGN,SHINAGAWA KU,TOKYO 141,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：711 / 713

页数：3

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