ULTRA-SHALLOW HIGH-CONCENTRATION BORON PROFILES FOR CMOS PROCESSING

被引：70

作者：

CAREY, PG ^{[1
]}

SIGMON, TW ^{[1
]}

PRESS, RL ^{[1
]}

FAHLEN, TS ^{[1
]}

机构：

[1] XMR INC,SANTA CLARA,CA 95054

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 06期

关键词：

D O I：

10.1109/EDL.1985.26129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：291 / 293

页数：3

共 10 条

[1]

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APPLIED PHYSICS LETTERS, 1984, 44 (01) :107-109

[4] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

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IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

[5]

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APPLIED PHYSICS LETTERS, 1984, 45 (09) :982-984

[7] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON [J].

SEIDEL, TE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :353-355

[8]

SEIDEL TE, 1984, UNPUB P C ION BEAM M

[9]

SIGMON TW, 1984, MRS S P, V23, P247

[10] SOLAR-CELLS MADE BY LASER-INDUCED DIFFUSION DIRECTLY FROM PHOSPHINE GAS [J].

TURNER, GB ;

TARRANT, D ;

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PRESSLEY, R ;

PRESS, R .

APPLIED PHYSICS LETTERS, 1981, 39 (12) :967-969

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