TIME-RESOLVED REFLECTIVITY DURING PULSED-LASER IRRADIATION OF GAAS

被引：23

作者：

LOWNDES, DH

WOOD, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 12期

关键词：

D O I：

10.1063/1.92239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：971 / 973

页数：3

共 13 条

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[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

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LOWNDES DH, 1980, 1980 P MAT RES SOC C

[8] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

[9] NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW .

PHYSICS LETTERS A, 1979, 74 (06) :422-426

[10] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

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