NONTHERMAL PULSED LASER ANNEALING OF SI - PLASMA ANNEALING

被引：268

作者：

VANVECHTEN, JA ^{[1
]}

TSU, R ^{[1
]}

SARIS, FW ^{[1
]}

机构：

[1] FOM,INST ATOOM & MOLECUULFYS,AMSTERDAM,NETHERLANDS

来源：

PHYSICS LETTERS A | 1979年 / 74卷 / 06期

关键词：

D O I：

10.1016/0375-9601(79)90242-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the accompanying paper we have given evidence that pulsed laser annealing of Si does not involve normal thermal melting and recrystallization. Here we argue the importance of the electron-hole plasma produced by the laser to the annealing process. © 1979.

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页码：422 / 426

页数：5

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