Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs -: art. no. 182904

被引：197

作者：

Lin, HC

Ye, PD ^{[1
]}

Wilk, GD

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Adv Semicond Mat Amer, Phoenix, AZ 85034 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 18期

关键词：

D O I：

10.1063/1.2120904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-layer deposition (ALD) provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. We report detailed leakage current and breakdown electric-field characteristics of ultrathin Al2O3 dielectrics on GaAs grown by ALD. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of state-of-the-art SiO2 on Si, not counting the high-k dielectric properties for Al2O3. A Fowler-Nordheim tunneling analysis on the GaAs/Al2O3 barrier height is also presented. The breakdown electric field of Al2O3 is measured as high as 10 MV/cm as a bulk property. A significant enhancement on breakdown electric field up to 30 MV/cm is observed as the film thickness approaches to 1 nm. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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