Interactions of germanium atoms with silica surfaces

被引：14

作者：

Stanley, SK ^{[1
]}

Coffee, SS ^{[1
]}

Ekerdt, JG ^{[1
]}

机构：

[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA

来源：

APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 04期

基金：

美国国家科学基金会;

关键词：

silicon dioxide; germanium; surface reactions; thermal desorption; nanocrystals; germane; etching;

D O I：

10.1016/j.apsusc.2005.01.149

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GeH4 is thermally cracked over a hot filament depositing 0.7-15 ML Ge onto 2-7 nm SiO2/Si(1 0 0) at substrate temperatures of 300-970 K. Ge bonding changes are analyzed during annealing with X-ray photoelectron spectroscopy. Ge, GeHx, GeO, and GeO2 desorption is monitored through temperature programmed desorption in the temperature range 300-1000 K. Low temperature desorption features are attributed to GeO and GeH4. No GeO2, desorption is observed, but GeO2 decomposition to Ge through high temperature pathways is seen above 750 K. Germanium oxidization results from Ge etching of the oxide substrate. With these results, explanations for the failure of conventional chemical vapor deposition to produce Ge nanocrystals on SiO2 surfaces are proposed. (c) 2005 Elsevier B.V. All rights reserved.

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页码：878 / 882

页数：5

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