SELECTIVE GE DEPOSITION ON SI USING THERMAL-DECOMPOSITION OF GEH4

[1] INVESTIGATION OF CRYSTALLOGRAPHIC PROPERTIES OF THIN GERMANIUM-CRYSTALS GROWN ON SILICON SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1983, 102 (04) : 327 - 343

[2] SELECTIVE EPITAXY USING SILANE AND GERMANE [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) : 33 - &

[3] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 245 - 247

[4] MAENPAA M, 1982, J APPL PHYS, V53, P1076, DOI 10.1063/1.330519

[5] MUROTA J, 1982 EL SOC FALL M, P363

[1] INVESTIGATION OF CRYSTALLOGRAPHIC PROPERTIES OF THIN GERMANIUM-CRYSTALS GROWN ON SILICON SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1983, 102 (04) : 327 - 343

[2] SELECTIVE EPITAXY USING SILANE AND GERMANE [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) : 33 - &

[3] EPITAXIAL-GROWTH OF GE ON LESS-THAN-100 GREATER-THAN SI BY A SIMPLE CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 245 - 247

[4] MAENPAA M, 1982, J APPL PHYS, V53, P1076, DOI 10.1063/1.330519

[5] MUROTA J, 1982 EL SOC FALL M, P363