INVESTIGATION OF CRYSTALLOGRAPHIC PROPERTIES OF THIN GERMANIUM-CRYSTALS GROWN ON SILICON SUBSTRATES BY CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

AHARONI, H ^{[1
]}

DUREMBERGOVA, D ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91103

来源：

THIN SOLID FILMS | 1983年 / 102卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90050-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：327 / 343

页数：17

相关论文

共 14 条

[1] SOME PRACTICAL REMARKS ON DESIGN OF EXPERIMENTAL SYSTEMS FOR EXPITAXIAL GROWTH OF SI, GE AND SI-GE
AHARONI, H
BARLEV, A
[J]. VACUUM, 1974, 24 (02) : 89 - 93
[2] DEFECTS IN EPITAXIAL LAYERS OF SILICON-GERMANIUM GROWN ON SILICON SUBSTRATES
AHARONI, H
BARLEV, A
MARGALIT, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 254 - &
[3] MEASUREMENT OF THE LATTICE-CONSTANT OF SI-GE HETEROEPITAXIAL LAYERS GROWN ON A SILICON SUBSTRATE
AHARONI, H
[J]. VACUUM, 1978, 28 (12) : 571 - 578
[4] EPITAXIAL-GROWTH OF SILICON-GERMANIUM SINGLE-CRYSTALS
AHARONI, H
BARLEV, A
BLECH, IA
MARGALIT, S
[J]. THIN SOLID FILMS, 1972, 11 (02) : 313 - &
[5] AHARONI H, 1977, ISR J TECHNOL, V14
[6] DUMIN DJ, 1970, J ELECTROCHEM SO JAN, P95
[7] DUMIN DJ, 1970, RCA REV DEC, P620
[8] SILICON-GERMANIUM ALLOY GROWTH-CONTROL AND CHARACTERIZATION
HALBERG, LI
NEVIN, JH
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) : 779 - 793
[9] KLUG HP, 1954, XRAY DIFFRACTION PRO, P238
[10] Milnes AG, 1972, HETEROJUNCTIONS META