Interface states in HFO2 stacks with metal gate:: Nature, passivation, generation

被引：10

作者：

Garros, X ^{[1
]}

Reimbold, G ^{[1
]}

Duret, D ^{[1
]}

Leroux, C ^{[1
]}

Guillaumot, B ^{[1
]}

Louveau, O ^{[1
]}

Hobbs, C ^{[1
]}

Martin, F ^{[1
]}

机构：

[1] CEA, F-38054 Grenoble, France

来源：

2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL | 2005年

关键词：

D O I：

10.1109/RELPHY.2005.1493062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates interface states in HfO2 devices with metal gate. First we studied the nature of these defects. The Si/SiOx interface of SiOx/HfO2 stacks is modified by RTP at high temperature but after a 900 degrees C RTP, it is similar to Si interface of conventional SiO2 capacitors. Moreover, we show that higher temperatures of forming gas anneals FGA (530 degrees C) are required to passivate interface defects of HfO2 capacitor devices compared to SiO2. In a complete MOSfet process flow, T = 425 degrees C is however high enough to passivate interface states. Moreover, for the first time, we performed atomic Ho plasma annealing of HfO2/TiN stacks which drastically reduces the Dit down to 2-3.10(10)/cm(2)/eV. The generation of interface states is finally investigated. The degradation of the interface does not depend on the initial density of Dit and partial recovery of Dit is observed after stress interruption. Higher device lifetimes in term of NBTI and breakdown are then expected for 530 degrees C FGA devices.

引用

页码：55 / 60

页数：6

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