Numerical model for simulation of transport and recombination in OLEDs

被引：7

作者：

Masenelli, B ^{[1
]}

Tutis, E

Bussac, MN

Zuppiroli, L

机构：

[1] Ecole Polytech Fed Lausanne, Lab Solides Semicristallins, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech, Phys Theor Lab, Palaiseau, France

来源：

SYNTHETIC METALS | 2001年 / 121卷 / 1-3期

关键词：

computer simulations; organic semiconductors based on conjugated molecules; light sources;

D O I：

10.1016/S0379-6779(00)01138-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a recently developed numerical code for OLED simulation. This code contains a detailed description of contacts, charge transport and recombination. The route towards the simulation of a complex multilayer device is detailed through examples of single-layer and bilayer devices simulations as well as through the investigation of the action of a LiF thin film on injection.

引用

页码：1513 / 1514

页数：2

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