Realization of Mg(x=0.15)Zn(1-x=0.85)O-based metal-semiconductor-metal UV detector on quartz and sapphire

被引：49

作者：

Hullavarad, SS ^{[1
]}

Dhar, S

Varughese, B

Takeuchi, I

Venkatesan, T

Vispute, RD

机构：

[1] Univ Maryland, Dept Phys, Ctr Supercond Res, College Pk, MD 20742 USA

[2] Bluewave Semicond Inc, Columbia, MD 21045 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

关键词：

D O I：

10.1116/1.1913677

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this article we present the growth of hexagonal phase MgZnO on nonconventional substrates such as quartz and on sapphire for comparison of the device property. We are reporting the realization of MgZnO-based UV detector on quartz by the pulsed laser deposition technique. MgZnO films are characterized by x-ray diffraction, UV-visible spectroscopy, and Rutherford backscattering-channeling techniques. The morphology of the films is studied by atomic force microscopy. The metal-semiconductor-metal device was fabricated on the MgZnO film to study the device photoresponse under proper UV irradiation. (c) 2005 American Vacuum Society.

引用

页码：982 / 985

页数：4

共 13 条

[1] Electrical characterization of 1.8 MeV proton-bombarded ZnO [J].

Auret, FD ;

Goodman, SA ;

Hayes, M ;

Legodi, MJ ;

van Laarhoven, HA ;

Look, DC .

APPLIED PHYSICS LETTERS, 2001, 79 (19) :3074-3076

[2] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[3] Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J].

Choopun, S ;

Vispute, RD ;

Noch, W ;

Balsamo, A ;

Sharma, RP ;

Venkatesan, T ;

Iliadis, A ;

Look, DC .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3947-3949

[4] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].

Choopun, S ;

Vispute, RD ;

Yang, W ;

Sharma, RP ;

Venkatesan, T ;

Shen, H .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531

[5] ZnO Schottky ultraviolet photodetectors [J].

Liang, S ;

Sheng, H ;

Liu, Y ;

Huo, Z ;

Lu, Y ;

Shen, H .

JOURNAL OF CRYSTAL GROWTH, 2001, 225 (2-4) :110-113

[6] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[7]

Narayan J, 2002, SOLID STATE COMMUN, V121, P9, DOI 10.1016/S0038-1098(01)00431-8

[8] Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE [J].

Ohtomo, A ;

Kawasaki, M ;

Sakurai, Y ;

Yoshida, Y ;

Koinuma, H ;

Yu, P ;

Tang, ZK ;

Wong, GKL ;

Segawa, Y .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1998, 54 (1-2) :24-28

[9] MgxZn1-xO as a II-VI widegap semiconductor alloy [J].

Ohtomo, A ;

Kawasaki, M ;

Koida, T ;

Masubuchi, K ;

Koinuma, H ;

Sakurai, Y ;

Yoshida, Y ;

Yasuda, T ;

Segawa, Y .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468

[10] Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells [J].

Sun, HD ;

Makino, T ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Tamura, K ;

Koinuma, H .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :1993-1997

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