Thin-film polycrystalline silicon solar cells on ceramic substrates by aluminium-induced crystallization

被引：56

作者：

Gordon, I ^{[1
]}

Van Gestel, D ^{[1
]}

Van Nieuwenhuysen, K ^{[1
]}

Carnel, L ^{[1
]}

Beaucarne, G ^{[1
]}

Poortmans, J ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Louvain, Belgium

来源：

THIN SOLID FILMS | 2005年 / 487卷 / 1-2期

关键词：

aluminium-induced crystallization; epitaxy; polycrystalline silicon; solar cells;

D O I：

10.1016/j.tsf.2005.01.047

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin polycrystalline "seed layers" have been created on ceramic substrates using aluminium-induced crystallization (AIC) of amorphous silicon. An intermediate spin-on-oxide between substrate and AIC layer suppresses excessive nucleation and leads to larger grains. Epitaxial growth with high-temperature chemical vapor deposition has been successfully performed on these seed layers, yielding an average grain size around 5 gm. In this way, solar cells with grain size larger than active layer thickness have been made, reaching V-oc values up to 460 mV and energy conversion efficiencies around 4.5%. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：113 / 117

页数：5

共 12 条

[1] Thin-film polycrystalline Si solar cells on foreign substrates:: film formation at intermediate temperatures (700-1300 °C) [J].