Peculiarities of field emission from silicon carbide films

被引：8

作者：

Evtukh, AA

Klyui, NI

Litovchenko, VG

Litvin, YM

Korneta, OB

Puzikov, VM

Semenov, AV

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Inst Monocrystals, UA-61001 Kharkov, Ukraine

来源：

APPLIED SURFACE SCIENCE | 2003年 / 215卷 / 1-4期

关键词：

silicon carbide; field emission; doping; rare-earth elements; Er; Pr;

D O I：

10.1016/S0169-4332(03)00308-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The emission properties of silicon carbide films were investigated. The SiC films were deposited from separated ion beams. The deposition of the films on silicon tips allows us to improve field emission strongly. The doping of silicon carbide films with rare-earth elements has sufficient influence on electron field emission parameters. The shape and the radius curvature of the tips are very important at electron emission. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：237 / 241

页数：5

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