A surface micromachined silicon gyroscope using a thick polysilicon layer

被引：34

作者：

Funk, K ^{[1
]}

Emmerich, H ^{[1
]}

Schilp, A ^{[1
]}

Offenberg, M ^{[1
]}

Neul, R ^{[1
]}

Lärmer, F ^{[1
]}

机构：

[1] Robert Bosch GmbH, D-70049 Stuttgart, Germany

来源：

MEMS '99: TWELFTH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 1999年

关键词：

D O I：

10.1109/MEMSYS.1999.746752

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A new silicon gyroscope is presented in this paper. It has a measuring range of +/-100 degrees/s and a resolution of 1.26 degrees/s at 10Hz bandwidth. The mechanical sensor structure consists of polysilicon and its lateral extension is 1600 mu m. The gyro element is 11 mu m thick and less than 19 mu g in weight. This structure is suspended in its centre of gravity with a thin tether beam. The tether beam is shaped in a way that the sensor structure can be tilted around its three axes. The gyroscope is fabricated using silicon surface micromachining technology incorporating several new process steps. These new steps are mainly thick polysilicon deposited in an epitaxy reactor, the deep silicon etching and a new stiction free release etch. The gyro structure is electrostatically driven in an in-plane torsional dithering motion. In response to an external angular rate the drive motion is coupled into an out-of-plane motion which is measured capacitively.

引用

页码：57 / 60

页数：4

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