Zn-doped InGaP grown by the LP-MOCVD

Zn-doped In0.485Ga0.515P epitaxial layers were grown on semi-insulating GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) at the temperatures 520, 560, and 720 degrees C. Growth conditions were optimized with respect to surface morphology for each growth temperature and the growth rates were in the range from 0.6 to 1.4 mu m/h. Diethylzinc was used as a Zn precursor and the dependencies of hole concentrations, mobilities,and photoluminescence spectra on the growth conditions were studied. Doping levels from 3 x 10(17) to 3 x 10(18) cm(-3) were obtained at different growth temperatures. The highest hole mobilities were measured in the layers grown at 560 degrees C. The acceptor activation energy of 21 meV was measured from the photoluminesce spectra in our samples. As the results are not directly comparable with the data from the literature, theoretical models of Zn incorporation are discussed. A desorption energy of 0.55 eV of Zn atoms was calculated from the temperature dependence of the zinc distribution coefficient K-Zn.