Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM

被引：26

作者：

Lanza, M. ^{[1
]}

Porti, M.

Nafria, M.

Benstetter, G.

Frammelsberger, W.

Ranzinger, H.

Lodermeier, E.

Jaschke, G.

机构：

[1] Univ Autonoma Barcelona, Dept Engn, Bellaterra 08913, Spain

[2] Univ Appl Sci Deggendorf, Dept Elect Engn, D-94469 Deggendorf, Germany

[3] Infineon Technol Leuven, B-3001 Heverlee, Belgium

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2007.07.045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the dependence of the electrical characteristics of some thin (<4 nm) HfO2, HfSiO and HfO2/SiO2 stacks on their manufacturing process is studied at the nanoscale. Topography, current maps and current-voltage (I-V) characteristics have been collected by conductive atomic force microscope (CAFM), which show that their conductivity depends on some manufacturing parameters. Increasing the annealing temperature, physical thickness or Hafnium content makes the structure less conductive. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：1424 / 1428

页数：5

共 11 条

[1] Breakdown kinetics of Pr2O3 films by conductive-atomic force microscopy -: art. no. 231913 [J].

Fiorenza, P ;

Lo Nigro, R ;

Raineri, V ;

Lombardo, S ;

Toro, RG ;

Malandrino, G ;

Fragalà, IL .

APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3

[2] Thickness determination of thin and ultra-thin SiO2 films by C-AFM IV-spectroscopy [J].

Frammelsberger, W ;

Benstetter, G ;

Kiely, J ;

Stamp, R .

APPLIED SURFACE SCIENCE, 2006, 252 (06) :2375-2388

[3]

KAUERAUF T, 2002, IEDM, V2, P521

[4] Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy -: art. no. 074315 [J].

Kremmer, S ;

Wurmbauer, H ;

Teichert, C ;

Tallarida, G ;

Spiga, S ;

Wiemer, C ;

Fanciulli, M .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (07)

[5] Current limited stresses of SiO2 gate oxides with conductive atomic force microscope [J].

Porti, M ;

Nafría, M ;

Aymerich, X .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) :933-940

[6] Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy [J].

Porti, M ;

Nafría, M ;

Aymerich, X ;

Olbrich, A ;

Ebersberger, B .

APPLIED PHYSICS LETTERS, 2001, 78 (26) :4181-4183

[7]

QI WJ, 2000, APPL PHYS LETT, P77

[8]

STEMMER S, 2003, APPL PHYS LETT, V83

[9]

STEMMER S, 2003, J ELECTROCHEM SOC, V150, pF173

[10] High-κ gate dielectrics:: Current status and materials properties considerations [J].

Wilk, GD ;

Wallace, RM ;

Anthony, JM .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5243-5275

← 1 2 →

Influence of the manufacturing process on the electrical properties of thin (&lt;4 nm) Hafnium based high-k stacks observed with CAFM

Influence of the manufacturing process on the electrical properties of thin (<4 nm) Hafnium based high-k stacks observed with CAFM