Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy

被引：52

作者：

Porti, M

Nafría, M

Aymerich, X

Olbrich, A

Ebersberger, B

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] Infineon Technol AG, D-81730 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期

关键词：

D O I：

10.1063/1.1382624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A conductive atomic force microscope has been used to electrically stress and to investigate the effects of degradation in the conduction properties of ultrathin (<6 nm) SiO2 films on a nanometer scale (areas of approximate to 100 nm(2)). Before oxide breakdown, switching between two states of well-defined conductivity and sudden changes of conductivity were observed, which are attributed to the capture/release of single charges in the defects generated during stress. (C) 2001 American Institute of Physics.

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页码：4181 / 4183

页数：3

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