CHARACTERIZATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY

被引：39

作者：

KOCH, RH

HAMERS, RJ

机构：

来源：

SURFACE SCIENCE | 1987年 / 181卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(87)90174-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：333 / 339

页数：7

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[1] NATIVE DEFECTS AT THE SI/SIO2 INTERFACE - AMORPHOUS-SILICON REVISITED
BIEGELSEN, DK
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[2] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE
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[3] HALL-EFFECT, ANISOTROPY, AND TEMPERATURE-DEPENDENCE MEASUREMENTS OF 1/F NOISE IN SILICON ON SAPPHIRE
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[J]. PHYSICAL REVIEW B, 1983, 28 (04): : 1935 - 1943
[4] A SIMPLIFIED SCANNING TUNNELING MICROSCOPE FOR SURFACE SCIENCE STUDIES
DEMUTH, JE
HAMERS, RJ
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WELLAND, ME
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1320 - 1323
[5] CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S
KIRTON, MJ
UREN, MJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1270 - 1272
[6] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE
RALLS, KS
SKOCPOL, WJ
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[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (03) : 228 - 231
[7] SPATIAL LOCATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY
WELLAND, ME
KOCH, RH
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 724 - 726