SPATIAL LOCATION OF ELECTRON TRAPPING DEFECTS ON SILICON BY SCANNING TUNNELING MICROSCOPY

被引：94

作者：

WELLAND, ME

KOCH, RH

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：724 / 726

页数：3

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