OXIDE-GROWTH ON ETCHED SILICON IN AIR AT ROOM-TEMPERATURE

被引：216

作者：

RAIDER, SI ^{[1
]}

FLITSCH, R ^{[1
]}

PALMER, MJ ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JCT,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 03期

关键词：

D O I：

10.1149/1.2134225

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：413 / 418

页数：6

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