CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S

被引：129

作者：

KIRTON, MJ

UREN, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.97000

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1270 / 1272

页数：3

共 11 条

[1] STANDARDIZED TERMINOLOGY FOR OXIDE CHARGES ASSOCIATED WITH THERMALLY OXIDIZED SILICON [J].

DEAL, BE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (03) :606-608

[2] ENERGY CONCEPTS OF INSULATOR SEMICONDUCTOR INTERFACE TRAPS [J].

ENGSTROM, O ;

ALM, A .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5240-5244

[3]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[4] EFFECT OF ELECTRON-HOLE PAIRS ON PHONON FREQUENCIES IN SI RELATED TO TEMPERATURE-DEPENDENCE OF BAND-GAPS [J].

HEINE, V ;

VANVECHTEN, JA .

PHYSICAL REVIEW B, 1976, 13 (04) :1622-1626

[5] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[6]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[7]

PAO HC, 1965, IEEE T ELECTRON DEV, V12, P139

[8] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J].

RALLS, KS ;

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

FETTER, LA ;

EPWORTH, RW ;

TENNANT, DM .

PHYSICAL REVIEW LETTERS, 1984, 52 (03) :228-231

[9] 1/F AND RANDOM TELEGRAPH NOISE IN SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

UREN, MJ ;

DAY, DJ ;

KIRTON, MJ .

APPLIED PHYSICS LETTERS, 1985, 47 (11) :1195-1197

[10]

UREN MJ, 4TH P INT C 1F NOIS

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