1/F AND RANDOM TELEGRAPH NOISE IN SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：245

作者：

UREN, MJ

DAY, DJ

KIRTON, MJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96325

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1195 / 1197

页数：3

共 10 条

[1] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE [J].

DUTTA, P ;

HORN, PM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (03) :497-516

[2] EXPERIMENTAL STUDIES ON 1-F NOISE [J].

HOOGE, FN ;

KLEINPENNING, TGM ;

VANDAMME, LKJ .

REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) :479-532

[3] LOW-FREQUENCY NOISE IN JUNCTION FIELD-EFFECT TRANSISTORS [J].

KANDIAH, K ;

WHITING, FB .

SOLID-STATE ELECTRONICS, 1978, 21 (08) :1079-1088

[4] NOISE IN SEMICONDUCTORS - SPECTRUM OF A 2-PARAMETER RANDOM SIGNAL [J].

MACHLUP, S .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (03) :341-343

[5]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[6] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J].

RALLS, KS ;

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

FETTER, LA ;

EPWORTH, RW ;

TENNANT, DM .

PHYSICAL REVIEW LETTERS, 1984, 52 (03) :228-231

[7] MODIFIED 1/F TRAPPING NOISE THEORY AND EXPERIMENTS IN MOS-TRANSISTORS BIASED FROM WEAK TO STRONG INVERSION INFLUENCE OF INTERFACE STATES [J].

REIMBOLD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1190-1198

[8] COMPOSITION OF 1/F NOISE IN METAL-INSULATOR-METAL TUNNEL-JUNCTIONS [J].

ROGERS, CT ;

BUHRMAN, RA .

PHYSICAL REVIEW LETTERS, 1984, 53 (13) :1272-1275

[9]

SAVELLI M, 1983, NOISE PHYSICAL SYSTE

[10]

Van Der Ziel A., 1979, Advances in electronics and electron physics, vol.49, P225, DOI 10.1016/S0065-2539(08)60768-4

← 1 →