EFFECT OF ELECTRON-HOLE PAIRS ON PHONON FREQUENCIES IN SI RELATED TO TEMPERATURE-DEPENDENCE OF BAND-GAPS

[1] ALVAREZ CVD, 1974, SOLID STATE COMMUN, V14, P317

[2] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5168 - 5177

[3] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[4] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3794 - 3798

[5] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[6] Brooks H., 1955, ADV ELECTRON, V7, P85

[7] Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[8] ELECTRON-PHONON SELF-ENERGIES IN MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (01): : 131 - &

[9] COHEN ML, COMMUNICATION

[10] COHEN ML, 1970, SOLID STATE PHYS, V24, P134

[1] ALVAREZ CVD, 1974, SOLID STATE COMMUN, V14, P317

[2] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5168 - 5177

[3] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[4] EFFECT OF DISORDER ON CONDUCTION-BAND EFFECTIVE MASS, VALENCE-BAND SPIN-ORBIT SPLITTING, AND DIRECT BAND GAP IN III-V ALLOYS [J]. PHYSICAL REVIEW B, 1973, 8 (08): : 3794 - 3798

[5] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[6] Brooks H., 1955, ADV ELECTRON, V7, P85

[7] Cohen M. L., 1970, Solid state physics: advances in research and applications, P37, DOI 10.1016/S0081-1947(08)60070-3

[8] ELECTRON-PHONON SELF-ENERGIES IN MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1962, 128 (01): : 131 - &

[9] COHEN ML, COMMUNICATION

[10] COHEN ML, 1970, SOLID STATE PHYS, V24, P134