ENERGY CONCEPTS OF INSULATOR SEMICONDUCTOR INTERFACE TRAPS

被引：46

作者：

ENGSTROM, O ^{[1
]}

ALM, A ^{[1
]}

机构：

[1] ASEA AB,DIV ELECTR,DEPT SEMICOND COMPONENTS,S-72183 VASTERAS,SWEDEN

来源：

关键词：

D O I：

10.1063/1.332751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5240 / 5244

页数：5

共 20 条

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