Pre-breakdown in thin SiO2 films

被引：21

作者：

Crupi, F ^{[1
]}

Neri, B

Lombardo, S

机构：

[1] Dipartimento Ingn Informaz, I-56126 Pisa, Italy

[2] CNR, IMETEM, I-95121 Catania, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 06期

关键词：

dielectric breakdown; fluctuations; noise; reliability;

D O I：

10.1109/55.843163

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The on-off fluctuations of the tunnel current in 5.6 nm SiO2 films before dielectric breakdown are analyzed in detail. For this purpose, a low noise measurement system has been realized which allows detecting the pre-breakdown phenomena and interrupting the stress before the catastrophic failure occurs. A spectral analysis of these fluctuations is presented along with the preliminary results of the experiments made possible, for the first time, by the new measurement system.

引用

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页码：319 / 321

页数：3

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