LOW-FREQUENCY NOISE IN SILICON GATE METAL-OXIDE-SILICON CAPACITORS BEFORE OXIDE BREAKDOWN

被引：78

作者：

NERI, B ^{[1
]}

OLIVO, P ^{[1
]}

RICCO, B ^{[1
]}

机构：

[1] UNIV BOLOGNA,DIPARTIMENTO ELETTR INFORMAT & SISTEMIST,I-40136 BOLOGNA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 25期

关键词：

D O I：

10.1063/1.98930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2167 / 2169

页数：3

共 11 条

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[8] NOVEL MECHANISM FOR TUNNELING AND BREAKDOWN OF THIN SIO2-FILMS [J].

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[9] COMPOSITION OF 1/F NOISE IN METAL-INSULATOR-METAL TUNNEL-JUNCTIONS [J].

ROGERS, CT ;

BUHRMAN, RA .

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[10]

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