A study of the ionic route for hydrogen terminations resulting after SiO2 etching by concentrated aqueous solutions of HF

被引：14

作者：

Cerofolini, GF ^{[1
]}

机构：

[1] SGS Thomson Microelect, I-20041 Agrate Brianza, MI, Italy

来源：

APPLIED SURFACE SCIENCE | 1998年 / 133卷 / 1-2期

关键词：

ionic route; hydrogen termination; SiO2; etching;

D O I：

10.1016/S0169-4332(98)00182-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An ionic route is proposed to account for the observed hydrogen termination resulting after the attack by HF concentrated aqueous solution to thermally oxidized silicon. The route is constituted by three cycles each composed of four consecutive steps, the rate-determining one being F- transfer from the etching solution to the coma of SiFn termination. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：108 / 114

页数：7

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