Effect of electric field and temperature on hole mobility in Alq3 material

被引：7

作者：

Singh, SP ^{[1
]}

Gupta, VL ^{[1
]}

机构：

[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 11期

关键词：

D O I：

10.1049/el:20030520

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage characteristics of an Alq(3)-based hole-only device (ITO/Alq(3)/Au) are measured against temperature. As the hole current is space-charge limited, the hole mobility mu(p) against electric field and temperature was measured directly. The hole mobility exhibits a field dependence as observed for other disordered materials such as amorphous glasses.

引用

页码：862 / 863

页数：2

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