Organic field-effect transistors with single and double pentacene layers

被引：30

作者：

Jung, SY ^{[1
]}

Yao, Z

机构：

[1] Univ Texas, Dept Phys, Texas Mat Inst, Austin, TX 78712 USA

[2] Univ Texas, Ctr Nano & Mol Sci Technol, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 08期

关键词：

D O I：

10.1063/1.1865331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the characterization of field-effect transistors fabricated within individual grains of single and double pentacene layers grown on silicon oxide. Field-effect mobilities are found to increase with increasing gate voltage and exhibit a thermally activated form for the temperature dependence. These characteristics can be explained by the multiple trapping and release model. The mobilities of double-layer devices are one order of magnitude higher than those of single-layer devices. Possible origins of the traps are discussed. The geometry of these ultrathin devices makes them suitable for sensing applications. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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