Diamond for bio-sensor applications

被引:224
作者
Nebel, Christoph E.
Rezek, Bohuslav
Shin, Dongchan
Uetsuka, Hiroshi
Yang, Nianjun
机构
[1] AIST, Diamond Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic
关键词
D O I
10.1088/0022-3727/40/20/S21
中图分类号
O59 [应用物理学];
学科分类号
摘要
A summary of photo- and electrochemical surface modifications applied on single- crystalline chemical vapour deposition ( CVD) diamond films is given. The covalently bonded formation of amine- and phenyl- linker molecule layers is characterized using x- ray photoelectron spectroscopy, atomic force microscopy ( AFM), cyclic voltammetry and field- effect transistor characterization experiments. Amine- and phenyl- layers are very different with respect to formation, growth, thickness and molecule arrangement. We detect a single- molecular layer of amine- linker molecules on diamond with a density of about 10(14) cm(-2) ( 10% of carbon bonds). Amine molecules are bonded only on initially H- terminated surface areas to carbon. In the case of electrochemical deposition of phenyl- layers, multi- layer formation is detected due to three- dimensional ( 3D) growths. This gives rise to the formation of typically 25 angstrom thick layers. The electrochemical grafting of boron- doped diamond works on H- terminated and oxidized surfaces. After reacting such films with hetero- bifunctional crosslinker molecules, thiol- modified ss- DNA markers are bonded to the organic system. Application of fluorescence and AFM on hybridized DNA films shows dense arrangements with densities of up to 10(13) cm(-2). The DNA is tilted by an angle of about 35. with respect to the diamond surface. Shortening the bonding time of thiol- modified ss- DNA to 10 min causes a decrease of DNA density to about 10(12) cm(-2). Application of AFM scratching experiments shows threshold removal forces of around 75 nN for DNA bonded on phenyl- linker molecules and of about 45 nN for DNA bonded to amine- linker molecules. DNA sensor applications using Fe( CN6)(3-/4-) mediator redox molecules, impedance spectroscopy and DNA- field effect transistor devices performances are introduced and discussed.
引用
收藏
页码:6443 / 6466
页数:24
相关论文
共 107 条
[1]   Phenyl layers on H-Si(111) by electrochemical reduction of diazonium salts:: monolayer versus multilayer formation [J].
Allongue, P ;
de Villeneuve, CH ;
Cherouvrier, G ;
Cortès, R ;
Bernard, MC .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 2003, 550 :161-174
[2]  
ANGUS JC, THIN FILM DIAMOND, V2, P97
[3]  
Bergonzo P, 2004, SEMICONDUCT SEMIMET, V77, P197
[4]   Radiation detection devices made from CVD diamond [J].
Bergonzo, P ;
Tromson, D ;
Mer, C .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (03) :S105-S112
[5]   Boron-doped homoepitaxial diamond layers: Fabrication, characterization, and electronic applications [J].
Borst, TH ;
Weis, O .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1996, 154 (01) :423-444
[6]   OPERATION OF CHEMICALLY SENSITIVE FIELD-EFFECT SENSORS AS A FUNCTION OF THE INSULATOR-ELECTROLYTE INTERFACE [J].
BOUSSE, L ;
DEROOIJ, NF ;
BERGVELD, P .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) :1263-1270
[7]   Micromechanical mass sensors for biomolecular detection in a physiological environment [J].
Braun, T ;
Barwich, V ;
Ghatkesar, MK ;
Bredekamp, AH ;
Gerber, C ;
Hegner, M ;
Lang, HP .
PHYSICAL REVIEW E, 2005, 72 (03)
[8]  
Brawer M.K., 2001, Prostate Specific Antigen
[9]   Organometallic chemistry on silicon and germanium surfaces [J].
Buriak, JM .
CHEMICAL REVIEWS, 2002, 102 (05) :1271-1308
[10]  
Carlisle J. A., 2003, Electrochemical Society Interface, V12, P28