Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity

被引：58

作者：

Sun, YJ ^{[1
]}

Brandt, O ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 04期

关键词：

D O I：

10.1116/1.1585068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a comprehensive study of the growth of GaN(1 (1) over bar 00) on gamma-LiAlO2(100) by plasma-assisted molecular beam epitaxy. Pure GaN(1 (1) over bar 00) layers are obtained preferentially on a particular face of the substrate. We provide a means by which to identify this face by simple chemical treatment. Nitridation of the substrate prior to growth as well as immediate N-rich nucleation conditions invariably induce phase mixture. In contrast, immediate Ga-rich nucleation is found to result in the growth of pure GaN(1 (1) over bar 00) films. Layers nucleated at low temperature exhibit the highest structural and morphological quality reported so far for non-[0001]-oriented structures. (C) 2003 American Vacuum Society.

引用

页码：1350 / 1356

页数：7

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