Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy

被引：88

作者：

Brandt, O ^{[1
]}

Muralidharan, R ^{[1
]}

Waltereit, P ^{[1
]}

Thamm, A ^{[1
]}

Trampert, A ^{[1
]}

von Kiedrowski, H ^{[1
]}

Ploog, KH ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期

关键词：

D O I：

10.1063/1.125524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular-beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requirements of high structural, morphological, optical, and electrical quality. The results demonstrate that molecular-beam epitaxy is a competitive technique for the growth of group-III nitrides. (C) 1999 American Institute of Physics. [S0003-6951(99)00151-5].

引用

页码：4019 / 4021

页数：3

共 13 条

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