Giant electric fields in unstrained GaN single quantum wells

被引：198

作者：

Langer, R ^{[1
]}

Simon, J

Ortiz, V

Pelekanos, NT

Barski, A

André, R

Godlewski, M

机构：

[1] CEA, SP2M PSC, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble, France

[2] Univ Grenoble 1, Spectrometrie Phys Lab, CNRS, UMR 5588, F-38402 St Martin Dheres, France

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期

关键词：

D O I：

10.1063/1.124193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that, even in unstrained GaN quantum wells with AlGaN barriers, there exist giant electric fields as high as 1.5 MV/cm. These fields, resulting from the interplay of the piezoelectric and spontaneous polarizations in the well and barrier layers due to Fermi level alignment, induce large redshifts of the photoluminescence energy position and dramatically increase the carrier lifetime as the quantum well thickness increases. (C) 1999 American Institute of Physics. [S0003-6951(99)04225-4].

引用

页码：3827 / 3829

页数：3

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