OPTICAL STUDIES OF THE PIEZOELECTRIC EFFECT IN (111)-ORIENTED CDTE/CD1-XZNXTE STRAINED QUANTUM-WELLS

被引：54

作者：

ANDRE, R ^{[1
]}

DESHAYES, C ^{[1
]}

CIBERT, J ^{[1
]}

DANG, LS ^{[1
]}

TATARENKO, S ^{[1
]}

SAMINADAYAR, K ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,SERV PHYS & PHYS SEMICOND,F-38041 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.42.11392

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the optical properties of (111)-oriented CdTe/Cd1-xZnxTe single quantum wells grown by molecular-beam epitaxy on (001) GaAs substrates. Several quantum wells with different widths were coherently grown on a single, thick Cd1-xZnxTe buffer layer, which induces the same in-plane strains 1% in all quantum wells. A strong red shift of the exciton transition is observed. It increases linearly with the well width at a rate of 2.5 meV/, so that exciton transitions occur at energies below the gap of bulk CdTe for wider wells. This linear red shift can only be explained by the existence of a dominant piezoelectric field across the strained quantum wells. © 1990 The American Physical Society.

引用

页码：11392 / 11395

页数：4

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